MTY16N80E |
RFQ for MTY16N80E |
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| Product | Manufacturers | Pack | D/C |
| MTY16N80E | - | TO | - |
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Features |
| • Robust High Voltage Termination• Avalanche Energy Specified• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated Temperature |
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
800 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
800 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive(tp 10 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ Tc = 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
16 11 55 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
300 2.4 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =100Vdc,VGS = 10Vdc, Vdc,Peak IL =16 Apk, L =10 mH, RG = 25) |
EAS |
1280 |
mJ |
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| MTY14N100E | ||
| MTY16N80E | TO | |
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| MTY25N60ECX | ||
| MTY30N50E | TO-3PL | |
| MTY50N50 | ||
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| MTY14N100 | ||
| MTY10N100E | ||
| MTY100N10E | ||
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